META Conference, META'10

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Polarized InGaN light-emitting diodes by sub-wavelength metallic nanograting
Liang Zhang

Last modified: 2009-11-03

Abstract


Linearly polarized light from InGaN green light emitting diode grown on (0001) oriented sapphire is demonstrated by using sub-wavelength metallic nano-gratings. Polarization ratio can reach 7:1 (~88%), the highest ever reported from a single light emitting device. The polarization characteristics are studied and discussed in details