META Conference, META'10

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Enhancement and stabilization of photoluminescence of porous silicon by passivating it with LaF3
Abu Bakar Md. Ismail, Sinthia Shabnam Mou

Last modified: 2009-11-12

Abstract


This article reports the LaF3 passivation of porous silicon (PS) and its influence on the photoluminescence (PL) properties of PS. PS samples, prepared by electrochemical etching in a solution of HF and ethanol, were passivated with e-beam evaporated-LaF3 of different thicknesses. It was observed that passivation of PS with LaF3 leaded to a good enhancement of PL intensity. PL intensity of PS decreased with the increase in thickness of LaF3 layer. The aging effect on the PL of LaF3 passivated PS was also studied. It was also observed that all the samples showed degradation in PL intensity with time but the sample with the thinnest LaF3 layer suffered the most from aging effect compared to the other samples. The degraded PL intensity due to aging was able to recover by annealing the LaF3-passivated PS samples in the air.